LABORATORY OF NON-EQUILIBRIUM SEMICONDUCTOR SYSTEMS
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INSTITUTE OF SEMICONDUCTOR PHYSICS, SIBERIAN BRANCH OF THE RUSSIAN ACADEMY OF SCIENCES
LABORATORY OF NON-EQUILIBRIUM SEMICONDUCTOR SYSTEMS |
Русский|English |
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| INSTITUTE OF SEMICONDUCTOR PHYSICS, SIBERIAN BRANCH OF THE RUSSIAN ACADEMY OF SCIENCES | |
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BASIC TRENDS AND SCOPE OF RESEARCH Nanostructres with quantum dots: Effects of interparticle interaction in the QDs ensemble;coulomb interaction of electrons/holes inside an isolated quantum dot, coulomb interaction of charges beweeh QDs, interaction (supersition) of elastic fields formed by individual QDs. Porous silicon: microchanel wafers, nanomembranes for biology and medicine. | HISTORICAL BACKGROUND
CONTACTS: Novosibirsk |
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P. L. Novikov, A. Le Donne, S. Cereda, Leo Miglio, S. Pizzini, S. Binetti, M. Rondanini, C. Cavallotti, D. Chrastina, T. Moiseev, H. von Kanel, G. Isella, F. Montalenti. Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments. - Appi. Phys. Lett., 2009, Vol. 94, No. 5, pp. 051904-051906 |
J.V. Smagina, P.L. Novikov, V.A. Armbrister, V.A. Zinoviev, A.V. Nenashev, A.V. Dvurechenskii. Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation - Physica B, 2009, v. 404, 4712-4715. (pdf) |
А.В. Двуреченский, А.И. Якимов. Физические явления и технологии в основе полупроводниковых наноструктур с квантовыми точками для ик-диапазона. Известия РАН, серия физическая, том 73, №1, с.71-75 (pdf) |
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Last update: 28/06/2010 |
The history of the laboratory is connected with the research developments in the field of radiation solid physics.
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