STAFF MEMBERS
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Leonid S. Smirnov Chief researcher, |
Scientific activities:
Doctor Smirnov is an expert in semiconductor physics and semiconductor electronics. His main scientific trends are: The effect of radiation for semiconductors, ion implantation, impulse anealing.
Complex studies of semiconductor processes -including the formation of radiation defects, their properties, defects interaction with impurities, thermoeffects interface in semiconductors — led to the development of physical bases and to that of radiaton technology methods and the increase of elements resistance to radiation in semiconductor electronics. (1954 — 1984).
The conducted investigations in physics of ion doping of silicon and binary compounds — particularly, defects formation processes and impurities behaviour (reaction) depending on implantation conditions and thermal processing regimes, radiation-accelerated diffusion and ion synthesis — stimulated the introduction of ion-beam technology in industry (1964 — 1984).
The method of impulse heating of thin semiconductor layers with powerful light or electron beams, that allows us to create ultra-thin doped and impurity-oversaturated layers with no matrix changes, was proposed and realised, and the corresponding facilities were developed. Using the impulse method, it is possible to make up monocrystalline semiconductor layers on amorphous insulators, which open us the way to multi-layer electronics. (1974 — 1984).
Leonid S. Smirnov supervised 21 PhDs in phys.-math. sci and 2 Doc. of phys.-math. sci.
He is the author of 19 inventions.
Education:
graduated from Leningrad State University.
Professional activities:
- PIAS, 1954
- ISP SB RAS, 1962
Selected publications:
author of more than 220 original papers, 4 general monographs ("Physical processes in radiated semiconductors", 1974; "Problems of semiconductor radiation technology", 1980.; "Doping semiconductors with the method of nuclear reactions", 1984; "Impulse anealing of semiconductor materials", 1982.