Russian Conference and the School of Young Scientists
on Topical Problems
of Semiconductor Photoelectronics
(with foreign participation)
11-15 September, 2017, Novosibirsk
 
General
News
20.04.2017 List of invited reports was published.
19.04.2017 Abstracts submission was prolonged to 30.04.2017.
23.03.2017 Information about the registration fee was placed on the Conference site.
10.03.2017 Welcome to the Conference site “PHOTONICS 2017”!
RUSSIAN

PHOTONICS 2017 is a continuation of a series of scientific conferences devoted to semiconductor photoelectronics. This event has already become traditional in Novosibirsk, which suggests the successful holding of this arrangement in 2003, 2008, 2011, 2015. The experience of the previous conferences has demonstrated the fruitfulness of discussing photoelectronics-related problems within one arrangement.

Due to its high scientific level, the conference PHOTONICS has been widely acknowledged in Russia and abroad. The subjects of the conference embrace a wide circle of issues regarding physics of quantum effects, optical and photoelectric phenomena, nanostructures formation based on a wide spectrum of semiconductor materials and nanocrystals, transformation and interaction of optical radiation.

Brand-new trends in the development of homeland photoelectron technologies connected with the registration of ultraweak optical signals in UV, IR, THz and visible spectral ranges, and radiophotonics will be presented at the conference. The issues of introducing innovative technologies will be considered.

Lectures aimed at initiating would-be scientists into the most important and interesting problems in the field of semiconductor photoelectronics will be delivered within the School of Young Scientists and Students.

The Conference venue will be the “Sosnovka” resort-hotel, 7 km away from the Novosibirsk Academgorodok, at the shore of the Berdsk gulf in a picturesque pinery.

Main scientific trends:

  • methods and technologies of obtaining nanostructured materials for perspective IR-photodetectors;
  • photoelectric phenomena in semiconductor structures;
  • photodetectors of near and long IR-ranges based on А2В6 and А3В5 compounds, elementary semiconductors and quantum nanostructures (superlattices, quantum wells, quantum wires, quantum dots);
  • solar cells, semiconductor transformers of longwave radiation into shortwave radiation;
  • semiconductor radiation sources of near and long IR-ranges;
  • THz radiation: semiconductor detectors and radiation sources;
  • physical bases of radiophotonics element base;
  • night vision devices: structuring principles, photoelectric characteristics;
  • new trends in thermal imaging device fabrication, multispectral and complex night vision devices.
 
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