Alexander V. Latyshev
, RAS academician, doctor of physical-mathematical sciences
1981 — graduated from the Novosibirsk State University on the speciality ''Physics''.
1998 — defended his doctoral thesis on ''Atomic steps on silicon surface in the processes of sublimation, epitaxy and phase transitions''. 2008 - elected RAS corresponding member on RAS Nanotechnologies and Information Technologies Department (speciality — ''Nanodiagnostics''). 2016 - elected RAS academician on RAS Nanotechnologies and Information Technologies Department (speciality — "Element base, Nanodiagnostics").He is an expert in the field of film and nanodimensional semiconductor structures synthesis from molecular beams, semiconductor nanotechnologies for a new generation element base and low-dimensional systems structural diagnostics.