ПУБЛИКАЦИИ
2000
Опубликованные статьи
- Орлов Д.А., Андреев В.Э., Терехов А.С. Упругое и неупругое туннелирование фотоэлектронов из зоны размерного квантования на границе раздела p+-GaAs-(Cs,O) - вакуум. Письма ЖЭТФ, 2000, т. 71, №. 4, с. 220.
- V.L. Alperovich, Yu.B. Bolkhovityanov, S.I. Chikichev, A.S. Jaroshevich, A.G. Paulish and A.S. Terekhov. Strained pseudomorphic InGaAsP/GaAs layers: epitaxial growth, electronic properties and photocathode applications. In: "InP and related compounds" ed. by M.O. Manasreh, Gordon and Breach Science Publishers, 2000, p. 651-726.
Статьи, отосланные в печать
- Alperovich V.L., Tereshchenko O.E., Litvinov A.N., Terekhov A.S. Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs(100) and (111). Appl. Surf. Sci., (accepted for publication).
- Pastuszka S., Hoppe M., Kratzmann D., Schwalm D., Wolf A., Jaroshevich A.S., Kosolobov S.N., Orlov D.A., Terekhov A.S. Preparation and performance of transmission-mode GaAs-photocathodes as sources for cold dc electron beams. J. Appl. Phys. 2000 (accepted for publication).
Тезисы докладов
- D.A.Orlov, M.Hoppe, U.Weigel, D.Schwalm, A.S.Terekhov, A.Wolf. Longitudinal and transverse energy distributions of electrons emitted from GaAs(Cs,O). Abstracts of the PES2000 Workshop, Nagoya, Japan.
- Alperovich V.L., Tereshchenko O.E., Litvinov A.N., Terekhov A.S. Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs. Abstracts of 10th International Conference on Solid Films and Surfaces (ICSFS-10), July 9-13, 2000, Princeton, USA, Mo-B-1500.
- Tereshchenko O.E., Daineka D.V., Paget D. Nonmetal-metal and disorder-order phase transitions at ultrathin alkali metal/GaAs(100) interfaces. Abstracts of 10th International Conference on Solid Films and Surfaces (ICSFS-10), July 9-13, 2000, Princeton, USA, Mo-B-1440.